JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
D965
FEATURES
TRANSISTOR( NPN
)
TO—92
1.EMITTER
Power dissipation
P
CM
: 0.75
W(Tamb=25℃)
Collector current
I
CM
:
5
A
Collector-base voltage
V
(BR)CBO
: 42
V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
H
FE
(
1
)
DC current gain
H
FE
(
2
)
H
FE
(
3
)
Collector-emitter saturation voltage
V
CE
(sat)
2. COLLECTOR
3. BASE
1 2 3
unless
Test
otherwise
MIN
42
22
6
specified)
TYP
MAX
UNIT
V
V
V
0.1
0.1
conditions
Ic=1
�½�
A, I
E
=0
Ic= 1
I
E
= 10
mA, I
B
=0
μ
A, I
C
=0
V
CB
= 30 V , I
E
=0
V
EB
= 6 V, I
C
=0
V
CE
= 2 V,
mA
V
CE
= 2V,
V
CE
= 2V,
mA
I
C
= 0.15
150
340
150
μ
A
μ
A
I
C
= 500 mA
I
C
= 2000
950
I
C
=3000mA,I
B
=100 mA
0.35
V
CLASSIFICATION OF H
FE(2)
Rank
Range
R
340-600
T
560-950