JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FBAS40DW-05
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
Low Forward Voltage Drop
Fast Switching
Ultra-Small Surface Mount Package
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FBAS40DW-05
Marking:K45
Symbol
V
RM
V
R
I
O
Pd
R
θ
JA
T
J
T
STG
Limits
40
40
150
625
125
-65-125
Unit
V
mA
mW
℃/W
℃
℃
WBFBP-06C
(2×2×0.5)
unit: mm
1
Maximum Ratings @T
A
=25℃
Parameter
Peak Repetitive reverse voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Thermal Resistance. Junction to Ambient Air
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Reverse voltage
Forward
Total
voltage
leakage current
Symbol
I
R
V
F
C
T
t
rr
unless
Test
V
R
=30V
I
F
=1mA
I
F
=40mA
V
R
=0,f=1MHz
otherwise
specified)
MIN
MAX
200
380
1000
5
5
UNIT
nA
mV
conditions
capacitance
pF
nS
Reverse recovery time
I
F
= I
R
=10mA,Irr=0.1
×
I
R,
R
L
=100Ω
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
