JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54ADW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
FEATURES
Low Forward Voltage Drop
Fast Switching
APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FBAT54ADW
Marking:KL6
Symbol
V
RM
V
R
I
O
P
D
T
J
T
STG
WBFBP-06C
(2×2×0.5)
unit: mm
1
Maximum Ratings @T
A
=25℃
Parameter
Peak Repetitive reverse voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Junction temperature
Storage temperature range
Limits
30
100
150
125
-65-125
Unit
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
leakage current
Symbol
V
(BR)
I
R
unless
Test
otherwise
specified）
MIN
30
2
240
320
400
500
1000
10
5
mV
MAX
UNIT
V
conditions
I
R
= 100
μ
A
V
R
=25V
I
F
=0.1mA
I
F
=1mA
u
A
Forward
voltage
V
F
I
F
=10mA
I
F
=30mA
I
F
=100mA
Total
capacitance
C
T
t
rr
V
R
=1V,f=1MHz
I
F
=10mA, I
R
=10mA~1mA
R
L
=100Ω
pF
nS
Reverse recovery time
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
