JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54TW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
1
FEATURES
Low Forward Voltage Drop
Fast Switching
APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
F BAT54TW
Marking:KLA
Maximum Ratings @T
A
=25℃
Parameter
Peak Repetitive reverse voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Junction temperature
Storage temperature range
WBFBP-06C
(2×2×0.5)
unit: mm
Symbol
V
RM
V
R
I
O
P
D
T
J
T
STG
Limits
30
100
150
125
-65-125
Unit
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Reverse breakdown voltage
Reverse voltage
leakage current
Symbol
V
(BR)
I
R
unless
Test
otherwise
specified）
MIN
30
2
240
320
400
500
1000
10
5
mV
MAX
UNIT
V
conditions
I
R
= 100
μ
A
V
R
=25V
I
F
=0.1mA
I
F
=1mA
u
A
Forward
voltage
V
F
I
F
=10mA
I
F
=30mA
I
F
=100mA
Total
capacitance
C
T
t
rr
V
R
=1V,f=1MHz
I
F
=10mA, I
R
=10mA~1mA
R
L
=100Ω
pF
nS
Reverse recovery time
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
