JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FMMBD4448HSDW
SURFACE MOUNT SWITCHING DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
Switching Diode
FEATURES
Ultra-Small Surface Mount Package
Fast Switching Speed
High Conductance
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FMMBD4448HSDW
Marking:KAB
Limits
100
80
Unit
V
V
WBFBP-06C
(2×2×0.5)
unit: mm
1
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
@=1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature range
I
FSM
Pd
R
θJA
T
J
T
STG
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak forward surge current @=1.0µs
57
500
250
4.0
2.0
150
625
150
-65 to +150
V
mA
mA
A
mW
℃/W
℃
℃
Electrical Ratings @T
A
=25℃
Parameter
Reverse Breakdown Voltage
Symbol
V
R
V
F1
Forward voltage
V
F2
V
F3
V
F4
Reverse current
Capacitance between terminals
Reverse Recovery Time
I
R1
I
R2
C
T
t
rr
Min.
80
0.62
0.72
0.855
1.0
1.25
0.1
25
3.5
4
Typ.
Max.
Unit
V
V
V
V
V
µA
nA
pF
ns
Conditions
I
R
=100μA
I
F
=5mA
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=70V
V
R
=20V
V
R
=6V,f=1MHz
V
R
=6V,I
F
=5mA
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
