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FUMG9N-WBFBP-05C 参数 Datasheet PDF下载

FUMG9N-WBFBP-05C图片预览
型号: FUMG9N-WBFBP-05C
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管 [TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 214 K
品牌: JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
 浏览型号FUMG9N-WBFBP-05C的Datasheet PDF文件第2页浏览型号FUMG9N-WBFBP-05C的Datasheet PDF文件第3页  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-05C Digital transistors (built-in resistors)
FUMG9N
TRANSISTOR
WBFBP-05C
(2×2×0.5)
unit: mm
DESCRIPTION
Epitaxial planar type NPN silicon transistor
(Built-in resistor type)
FEATURES
Two DTC114E in a package.
Mounting cost and area can be cut in half.
APPLICATION
Dual Digital Transistors for Inverter Drive
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Equivalent circuit
1
MARKING:G9
G9
Absolute maximum ratings(Ta=25℃)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Tstg
Limits
50
-10~40
50
100
150
150
-55~150
Unit
V
V
mA
mW
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
30
7
0.8
10
1
250
13
1.2
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
KΩ
3
0.3
0.88
0.5
Min.
Typ
Max.
0.5
Unit
V
V
mA
µA
Conditions
V
CC
=5V ,I
O
=100µA
V
O
=0.3V ,I
O
=10 mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0
V
O
=5V ,I
O
=5mA