JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
ＴＯ－９２Ｓ
1.SOURCE
K596
Si N-CHANNEL JUNCTION FET
FEATURES
Power dissipation
P
CM
: 0.1W（Tamb=25℃）
Gate Current
I
G
: 10mA
Drain current
I
D
: 1mA
Drain-Source voltage
BV
GDO
: -20
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Gate-Drain breakdown Voltage
Gate-Source cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Symbol
BV
GDO
V
GS(off)
I
DSS
|Y
FS
|
C
iss
2.GATE
3.DRAIN
123
unless
Test
otherwise
specified）
MIN
-20
-0.6
100
0.4
1.2
3.5
-1.5
800
TYP
MAX
UNIT
V
V
μA
�½�Ｓ
pF
conditions
I
G
= -100μA
V
DS
= 5V , I
D
=1μA
V
DS
= 5 V , V
GS
=0
V
DS
= 5V , V
GS
=0, f=1KHz
V
DS
=5V, V
GS
=0, f=1MHz
V
DS
= 5 V, V =0
GS
Output Capacitance
C
RSS
0.65
pF
f =
1MHz
I
DSS
Classification
Classification
I
DSS
(µA)
A
100-170
B
150-240
C
210-350
D
320-480
E
440-800
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
