JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
KSC2331
TO-92L
TRANSISTOR
NPN
1.EMITTER
FEATURE
Power dissipation
P
CM
: 1
W Tamb=25
Collector current
I
CM
: 0.7
A
Collector-base voltage
V
(BR)CBO
: 80
V
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
2.COLLECTOR
3.BASE
Tamb=25
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
C
ob
unless
Test
Ic= 100
otherwise
specified
MIN
80
60
8
0.1
0.1
40
240
0.7
1.2
8
30
V
V
pF
MHz
TYP
MAX
UNIT
V
V
V
A
A
conditions
A
I
E
=0
I
B
=0
I
C
=0
I
E
=0
I
C
=0
I
C
= 50mA
I
C
= 10mA ,
I
E
= 10 A
V
CB
=60V ,
V
EB
=5V ,
V
CE
=2 V,
I
C
= 500m A, I
B
= 50mA
I
C
= 500 mA,
I
B
= 50mA
(V
CB
=10V I
E
=0,f=1MHz)
V
CE
= 10 V, I
C
= 50mA
f
T
CLASSIFICATION OF h
FE(1)
Rank
Range
R
40-80
O
70-140
Y
120-240
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
