JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
KTC2316
FEATURES
Power dissipation
P
CM:
0.9
W (Tamb=25℃)
TO-92L
TRANSISTOR (NPN)
1.
EMITTER
2.
COLLECTOR
3.
BASE
Collector current
0.8
A
I
CM:
Collector-base voltage
120
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
CE
=
5
V, I
C
=
100
mA
I
C
=
500
mA, I
B
=
50
mA
V
CE
=
5
V, I
C
=
100
mA
V
CB
=
10
V, I
E
=0, f=
1
MHz
123
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
1
mA, I
E
=0
Ic=
10
mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=
120
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
5
V, I
C
=
10
mA
120
120
5
0.1
0.1
60
80
240
1
120
30
µA
µA
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
O
80-160
Y
120-240
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
