JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
KTC3880S
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
1.
BASE
2.
EMITTER
3.
COLLECTOR
150
mW (Tamb=25℃)
0. 95
1. 0
2. 4
1. 3
Collector current
20
mA
I
CM:
Collector-base voltage
40
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS( Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
2. 9
1. 9
0. 95
Unit: mm
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
100
µA, I
E
=0
Ic=
1
mA, I
B
=0
I
E
=
100
µA, I
C
=0
V
CB
=
18
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
6
V, I
C
=
1
mA
V
CE
=
6
V, I
C
=
1
mA
V
CB
=
6
V, I
E
=0, f=
1
MHz
V
CE
=
6
V, I
c
=
1
mA, f=
100M
HZ
40
30
4
0.5
0.5
40
500
1
5
0. 4
µA
µA
200
MHz
pF
dB
f
T
C
ob
NF
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
R
40-80
AQR
O
70-140
AQO
Y
100-200
AQY
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
