JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
KTC4075
FEATURES
Excellent hFE linearity
High hFE
Low Noise
Complementary to KTA2014
TRANSISTOR (NPN)
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction and Storage Temperature
Parameter
Value
60
50
5
150
100
-55-125
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
unless
Test
otherwise
conditions
specified)
MIN
60
50
5
0.1
0.1
70
700
0.25
80
V
MHz
MAX
UNIT
V
V
V
I
C
= 100
µ
A, I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
= 6V, I
C
=2mA
I
C
=100mA, I
B
= 10mA
V
CE
=10V, I
C
= 1mA
V
CE
=10V, I
E
=0, f=1MHz
V
CE
=6V,I
E
=0.1mA, f=1KHz,R
G
=10KΩ
µ
A
µ
A
f
T
C
ob
NF
3.5
10
dB
dB
Noise figure
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
70~140
LO
Y
120~240
LY
GR
200~400
LGR
BL
350~700
LBL
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
