JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
M8050
FEATURES
TRANSISTOR
（
NPN
）
TO—92
1.EMITTER
Power dissipation
P
CM
:
0.625
W（Tamb=25℃）
Collector current
I
CM
:
1
A
Collector-base voltage
V
(BR)CBO
: 40
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off
current
Symbol
V(BR)
CBO
V(BR)
CEO
*
V(BR)
EBO
I
CBO
I
CEO
2. BASE
3. COLLECTOR
1 2 3
unless
Test
otherwise
specified）
MIN
40
25
6
0.1
0.1
45
80
40
0.5
1.2
150
V
V
MHz
300
MAX
UNIT
V
V
V
μA
μA
conditions
Ic= 100μA
，
I
E
=0
I
C
= 0.1mA , I
B
=0
I
E
= 100μA， I
C
=0
V
CB
= 35V , I
E
=0
V
CE
= 20V , I
B
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
I
C
= 800mA, I
B
=80mA
I
C
=800mA, I
B
= 80m A
V
CE
=6V, I
C
= 20mA , f=30MHz
h
FE(1)
DC current gain
h
FE(2)
h
FE
（
3
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
* Pulse Test
：pulse
width
≤
300µs，duty cycle
≤2%。
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
