JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBT2222AE
C
TRANSISTOR
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
TOP
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
Complementary PNP Type available (MMBT2907AE)
PPLICATION
general purpose amplifier, switching.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1P
C
B
1. BASE
2. EMITTER
3. COLLECTOR
E
C
BACK
E
B
1P
B E
MAXIMUM RATINGS
T
A
=25℃ unless otherwise noted
Symbol
Parameter
Value
V
CBO
Collector-Base Voltage
75
V
CEO
40
Collector-Emitter Voltage
V
EBO
6
Emitter-Base Voltage
I
C
Collector Current -Continuous
600
P
C
Collector Dissipation
150
T
J
Junction Temperature
150
T
stg
Storage Temperature
-55to+150
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
V
CE
(sat)
V
BE
(sat)
Units
V
V
V
mA
mW
℃
℃
unless
Test
otherwise
specified）
MIN
75
40
6
0.1
0.1
0.1
35
50
75
100
40
1
0.3
2
1.2
300
8
4
V
V
MHz
pF
dB
400
TYP
MAX
UNIT
V
V
V
conditions
I
C
= 10
μ
A,I
E
=0
I
C
= 10mA, I
B
=0
I
E
=10
μ
A,I
C
=0
V
CB
=70 V,I
E
=0
V
CE
=60V,V
BE(off)
=3V
V
EB
= 3V,I
C
=0
V
CE
=10V,I
C
= 0.1mA
V
CE
=10V,I
C
= 1mA
V
CE
=10V,I
C
= 10mA
V
CE
=10V,I
C
= 150mA
V
CE
=10V,I
C
= 500mA
I
C
=500mA,I
B
= 50mA
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
= 50mA
I
C
=150mA,I
B
=15mA
V
CE
=20V, I
C
= 20mA
f=
100MHz
V
CB
=10V, I
E
=
0
, f=
1M
Hz
V
CB
=10V,I
c
=0.1mA,
f=1KHz,Rs=1KΩ
μ
A
μ
A
μ
A
f
T
C
ob
NF
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
