JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
C
MMBT3906E
TRANSISTOR
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
DESCRIPTION
PNP Epitaxial planar SiliconTransistor
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT3904E)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
APPLICATION
General Purpose Amplifier,switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:3N
C
TOP
B
1. BASE
2. EMITTER
3. COLLECTOR
E
C
BACK
E
B
3N
B E
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
R
Ɵ
JA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Temperature
Storage and Temperature
Value
-40
-40
-5
-200
150
833
150
-55-150
Units
V
V
V
mA
mW
℃/W
℃
℃
MIN
-40
-40
-5
-0.05
-0.1
60
80
100
60
30
-0.25
-0.4
-0.65
250
-0.85
-0.95
V
V
V
V
MHz
300
TYP
MAX
UNIT
V
V
V
µA
µA
ELECTRICAL CHARACTERISTICS (Ta=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
unless
Test
otherwise
conditions
specified)
I
C
=-10µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CE
=-30V,V
EB(off)
=-3V
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-0.1mA
V
CE
=-1V,I
C
=-1mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-50mA
V
CE
=-1V,I
C
=-100mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-20V,I
C
=-10mA,f=100MHz
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
