JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT—23
MMBTA13，14
FEATURES
1. BASE
TRANSISTOR（NPN）
2. EMITTER
3. COLLECTOR
Power dissipation
P
CM
:
0.3W（Tamb=25℃）
Collector current
I
CM
:
0.3A
Collector-base voltage
V
(BR)CBO
: 30V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE (sat)
*
V
BE
*
V
CE
=5 V, I
C
= 100mA
１．０
２．４
１．３
０．９５
２．９
１．９
０．９５
unless
Test
otherwise
specified）
MIN
30
30
10
0.1
0.1
MAX
UNIT
V
V
V
conditions
I
E
=0
Ic= 100
μ
A，
Ic= 100uA， I
B
=0
I
E
= 100
μ
A， I
c
=0
V
CB
=30 V , I
E
=0
V
EB
= 10V ,
I
C
=0
MMBTA13
MMBTA14
MMBTA13
MMBTA14
I
C
=100 mA, I
B
=0.1mA
V
CE
=5V,I
C
= 100mA
V
CE
=5V,
I = 10mA
C
０．４
Unit : mm
μ
A
μ
A
V
CE
=5V, I
C
= 10m A
5000
10000
10000
20000
1.5
2.0
125
V
V
MHz
f
T
f=
100MHz
*
Pulse Test : pulse width≤３００μ�½�，�½��½��½��½� �½��½��½��½��½�≤２％。
Marking : MMBTA13:1M；MMBTA14：1N
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
