JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBTA42E
TRANSISTOR
C
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
Power dissipation P
CM
: 0.15 W (Tamb=25
℃
)
APPLICATION
High Voltage Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1D
C
TOP
B
E
C
BACK
E
B
1. BASE
2. EMITTER
3. COLLECTOR
1D
B E
MAXIMUM RATINGS T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
stg
R
ӨJA
R
ӨJC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
Thermal Resistance, unction to Case
Parameter
Value
310
305
5
300
150
-55-150
200
83.3
Units
V
V
V
mA
℃
℃
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
unless
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE
(sat)
V
BE
(sat)
otherwise
Test
specified)
MIN
310
305
5
0.25
0.25
5
0.1
60
100
75
0.2
0.9
50
V
V
MHz
200
MAX
UNIT
V
V
V
conditions
I
C
= 100
µ
A, I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
=200V, I
E
=0
V
CE
=200V, I
B
=0
V
CE
=300V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=20mA, I
B
= 2mA
I
C
= 20mA, I
B
=2mA
V
CE
=20V, I
C
= 10mA
µ
A
µ
A
µ
A
µ
A
f
T
f=
30MHz
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
