JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT—23
S9011LT1
FEATURES
TRANSISTOR（ NPN
）
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P
CM
:
0.2
W（Tamb=25℃）
Collector current
I
CM
:
0.03
A
Collector-base voltage
V
(BR)CBO
: 30
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150
１．０
２．４
１．３
０．９５
２．９
１．９
０．９５
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
V
CE
(sat)
V
BE
(sat)
unless
Test
otherwise
specified）
MIN
30
20
4
0.1
0.1
0.1
70
200
0.3
1
V
V
TYP
MAX
UNIT
V
V
V
conditions
Ic= 100
μ
A， I
E
=0
Ic= 0.1mA， I
B
=0
I
E
=100
μ
A， I
C
=0
V
CB
=16 V , I
E
=0
V
CE
=16V , I
B
=0
V
EB
= 3.5V ,
I
C
=0
０．４
μ
A
μ
A
μ
A
V
CE
=5V, I
C
= 1mA
I
C
=10 mA, I
B
= 1mA
I
C
=10 mA, I
B
= 1mA
V
CE
=5V,
I = 1mA
C
Transition frequency
f
T
f=
30MHz
150
MHz
DEVICE MARKING:
S9011LT1= 1T
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
