JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9013M
TRANSISTOR
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
DESCRIPTION
NPN Epitaxial Silicon Transistor
FEATURES
High Collector Current. (I
C
=500mA)
Complementary to S9012M
Excellent h
FE
linearity.
APPLICATION
150mW Output Amplifier of Potable Radios in Class
B Push-pull Operation.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: J3
C
TOP
1. BASE
2. EMITTER
3. COLLECTOR
B
C
C
BACK
E
E
B
J3
B E
MAXIMUM RATINGS
T
A
=25
℃
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
40
25
5
500
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
unless otherwise
Test
conditions
specified)
MIN
40
25
5
0.1
0.1
0.1
120
40
0.6
1.2
150
8
V
V
MHz
pF
400
TYP
MAX
UNIT
V
V
V
I
C
= 100
µ
A
,
I
E
=0
I
C
=1mA
,
I
B
=0
I
E
=100
µ
A I
C
=0
V
CB
=40 V,I
E
=0
V
CE
=20V,I
B
=0
V
EB
= 5V,I
C
=0
V
CE
=1V,I
C
=50mA
V
CE
=1V,I
C
=500mA
I
C
=500mA,I
B
= 50mA
I
C
=500mA,I
B
= 50mA
V
CE
=6V,
I
C
= 20mA
µ
A
µ
A
µ
A
f
T
C
ob
f=
30MHz
V
CB
=6V,I
E
=0,f=
1
MHz
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
