JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
C
WBFBP-03B
S9014M
TRANSISTOR
(1.2×1.2×0.5)
unit: mm
TOP
DESCRIPTION
NPN Epitaxial Silicon Transistor
1. BASE
B
C
C
BACK
E
FEATURES
High h
FE
and good linearity
Complementary to S9015M
APPLICATION
Pre-Amplifier, Low Level & Low Noise
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
MARKING: J6
C
2. EMITTER
3. COLLECTOR
E
B
J6
B
E
MAXIMUM RATINGS T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
50
45
5
0.1
0.15
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
unless
Test
otherwise specified)
conditions
I
E
=0
MIN
50
45
5
0.1
0.1
0.1
200
1000
0.3
1
150
3.5
6
V
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
I
C
= 100
μ
A,
I
C
= 0.1mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=50 V , I
E
=0
V
CE
=35V ,
V
EB
= 4V ,
V
CE
=5V,
I
B
=0
I
C
=0
I
C
= 1mA
μ
A
μ
A
μ
A
I
C
=100 mA, I
B
= 5mA
I
C
=100 mA, I
B
= 5mA
V
CE
=5V,
I
C
= 10mA
f
T
C
obo
NF
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=5V,I
c
=0.2mA,
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
