JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9015LT1
FEATURES
Power dissipation
P
CM
:
0.2
W(Tamb=25℃)
Collector current
I
CM
:
-0.1
A
Collector-base voltage
V
(BR)CBO
: -50
V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150
TRANSISTOR( PNP
)
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
1.0
2.4
1.3
0.95
2.9
1.9
0.95
0.4
Unit : mm
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
H
FE(1)
V
CE
(sat)
V
BE
(sat)
unless
Test
otherwise
specified)
MIN
-50
-45
-5
-0.1
-0.1
200
1000
-0.3
-1
V
V
TYP
MAX
UNIT
V
V
V
conditions
I
E
=0
Ic= -100
μ
A,
Ic= -0.1mA, I
B
=0
I
E
=-100
μ
A, I
C
=0
V
CB
=-50 V , I
E
=0
V
EB
= -5V ,
I
C
=0
μ
A
μ
A
V
CE
=-5V, I
C
= -1mA
I
C
=-100 mA, I
B
= -10m A
I
C
=-100 mA, I
B
=-10m A
V
CE
=-5V,
I = -10mA
C
Transition frequency
f
T
f=
30MHz
150
MHz
CLASSIFICATION OF H
FE(1)
R�½��½��½�
R�½��½��½��½�
L
200-450
H
450-1000
DEVICE MARKING :
S9015LT1=M6