JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT—23
SS8550LT1
TRANSISTOR（ PNP
）
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
P
CM
:
0.3
W（Tamb=25℃）
Collector current
I
CM
:
-1.5
A
Collector-base voltage
V
(BR)CBO
: -40
V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
１．０
２．４
１．３
０．９５
２．９
１．９
０．９５
０．４
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
unless
otherwise
Test
specified）
MIN
-40
-25
-5
-0.1
-0.1
-0.1
120
40
-0.5
-1.2
100
V
V
MHz
350
MAX
UNIT
V
V
V
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
conditions
I
E
=0
Ic= -100
μ
A，
Ic= -0.1mA， I
B
=0
I
E
= -100
μ
A， I
C
=0
V
CB
= -40 V , I
E
=0
V
CE
= -20 V , I
B
=0
V
EB
= -5V ,
I
C
=0
μ
A
μ
A
μ
A
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
=-800 mA, I
B
= -80m A
I
C
=-800 m A, I
B
= -80m A
V
CE
= -10V,
I = -50mA
C
DC current gain
h
FE
（
2
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
f
T
f=
30MHz
Ｈ
CLASSIFICATION OF h
FE
(1)
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DEVICE MARKING
SS8550LT1=Y2
Ｌ
１２０－２００
２００－３５０
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
