JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TPT5610
FEATURES
Power dissipation
P
CM:
1
W (Tamb=25℃)
TO-92L
TRANSISTOR (PNP)
1.
EMITTER
2.
COLLECTOR
3.
BASE
Collector current
-1
A
I
CM:
Collector-base voltage
-25 V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
123
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=-
10
µA, I
E
=0
Ic=-
1
mA, I
B
=0
I
E
=-
10
µA, I
C
=0
V
CB
=-
20
V, I
E
=0
V
EB
=-
5
V, I
C
=0
V
CE
=-
2
V, I
C
=-
500
mA
I
C
=-
800
mA, I
B
=-
80
mA
V
CE
=-
2
V, I
C
=-
500
mA
V
CE
=-
2
V, I
C
=-
500
mA
V
CB
=-
10
V, I
E
=0, f=
1
MHz
-25
-20
-5
-1
-1
60
240
-0.5
-1
350
38
µA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE
Rank
Range
A
60-120
B
85-170
C
120-240
JIANGSU [ JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD ]
