DHE1A ~DHE1J
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Low profile space
Ideal for automated placement
Glass passivated chip junctions
Low forward voltage drop
Low leakage current
High forward surge capability
High temperature soldering:
260℃/10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
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Case:
JEDEC SOD-123FL molded plastic
body over glass passivated chip
Terminals:
Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity:
Laser band denotes cathode end
(TA = 25
°C
unless otherwise noted)
DHE- Symbol DHE1A DHE1B DHE1D DHE1F DHE1G DHE1J
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forwad voltage at 1.0A
Maximum DC reverse current
T
A
= 25
℃
at Rated DC blocking voltage
T
A
= 100℃
Maximum reverse recovery time
at I
F
= 0.5 A , I
R
= 1.0 A , I
rr
= 0.25 A
Typical junction capacitance at 4.0 V ,1MHz
Operating junction and storage
temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
T
J
, T
STG
50
35
50
100
70
100
200
140
200
1
25
300
210
300
400
280
400
600
420
600
V
V
V
A
A
1.0
5.0
100
50
20
–55
to +150
1.3
1.7
V
μA
75
nS
pF
℃
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