Ｒ
S E M I C O N D U C T O R
RC
GP
EGP10ATHRU EGP10M
SUPER FAST RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current:1.0Ampere
SILICON
RECTIFIER
１．０（２５．４）
ＭＩＮ
０．１０７（２．７）
０．０８０（２．０）
ＤＩＡ
０．２０５（５．２０）
０．１８０（４．１０）
１．０（２５．４）
ＭＩＮ
０．０３４（０．８５）
０．０２８（０．７１）
ＤＩＡ
Units
FEATURES
GPRC( Glass Passivated Rectifier Chip) inside
Glass passivated cavity-free junction
Low forward voltage drop,High current capability
High surge current capability
Super fast recovery time
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
JF
DO-41
MECHANICAL DATA
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012ounce, 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load,derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375"(9.5mm)lead Length at T
a
=55 C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 1.0 A
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
T
A
=25 C
T
A
=100 C
EGP
10A
50
35
50
ＥＧＰ
１０Ｂ
100
70
100
ＥＧＰ
１０Ｄ
150
105
150
ＥＧＰ
１０Ｆ
200
140
200
1.0
30.0
0.95
5.0
ＥＧＰ
１０Ｇ
400
280
400
Dimensions in inches and (millimeters)
ＥＧＰ
１０Ｊ
600
280
600
ＥＧＰ
１０Ｋ
800
280
800
ＥＧＰ
１０Ｍ
1000
280
1000
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
V
olts
V
olts
V
olts
A
mp
A
mps
1.25
V
olts
A
50
Maximum Reverse Recovery Time(Note1)
Typical Junction Capacitance(Note2)
Operating Junction and Storage Temperature
Range
T
rr
C
J
T
J
T
STG
35
50
-65 to+125
-65 to+150
25
ns
P
F
C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
8-4
JINAN JINGHENG CO., LTD.
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