Ｒ
LL60, LL60P
S E M I C O N D U C T O R
SMALL SIGNAL SCHOTTKY DIODES
SMALL SIGNAL
CHOTTKY DIODES
０．０６３（１．６）
０．０５５（１．４）
０．０１９（０．４８）
０．０１１（０．２８）
FEATURES
Metal-on-silicon junction, majority carrier conduction
High current capability, Low forward voltage drop
Extremely low reverse current I
R
Ultra speed switching characteristics
Small temperature coefficient of forward characteristics
Satisfactory Wave detection efficiency
For use in RECORDER¡¢TV¡¢RADIO¡¢TELEPHONE as detectors,super high
speed switching circuits, small current rectifier
JF
Mini-MELF
０．１４２（３．６）
０．１３４（３．４）
MECHANICAL DATA
Case:
MinMELF glass case (SOD- 80)
Polarity:color
band denotes cathode end
Weight:
Approx. 0.05gram
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Parameters
Repetitive Peak Reverse Voltage
Forward Continuous Current
Peak Forward Surge Current(t=1S)
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10S at 4mm from Case
T
A
=25 C
Value
LL60
20
30
150
-65 to+125
230
LL60P
30
50
400
Units
V
RRM
I
F
I
FSM
T
STG
/T
J
T
L
Volts
mA
mA
C
C
ELECTRICAL CHARACTERISTICS
Symbols
Parameters
Test Conditions
I
F
=1mA
LL60
LL60P
LL60
LL60P
LL60
LL60P
LL60
LL60P
Min
.
Value
Typ
.
0.35
0.26
0.70
0.70
1.0
5.0
4.0
Max
0.5
0.5
1.0
1.0
5.0
10.0
.
Units
V
F
I
R
C
J
h
t
rr
R
qJA
Forward Voltage
Reverse Current
Junction Capacitance
Detection Efficiency(See diagram 4)
Reverse Recovery time
Junction Ambient Thermal Resistance
I
F
=30mA
I
F
=200mA
V
R
=15V
V
R
=1V f=1MHz
V
R
=10V f=1MHz
Volts
mA
pF
%
10.0
60
V
I
=3V f=30MHz C
L
=10pF R
L
=3.8kW
I
F
=I
R
=1mA Irr=1mA Rc=100W
1
350
ns
C/W
R
JA
2-1
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657
FAX:86-531-6947096
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