JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N5301/5302/5303
・Low
collector saturation voltage
・Excellent
safe operating area
APPLICATIONS
・For
use in power amplifier and switching
circuits applications.
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N4398 2N4399 2N5745
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N4398
V
CBO
Collector-base voltage
2N4399
2N5745
2N4398
V
CEO
Collector-emitter voltage
2N4399
2N5745
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
2N4398/4399
Collector current
2N5745
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
-20
-7.5
200
200
-65~200
A
W
℃
℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-40
-60
-80
-40
-60
-80
-5
-30
A
V
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
