Product Specification
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Silicon PNP Power Transistors
2N4901 2N4902 2N4903
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N5067,2N5068,2N5069
・Low
collector-emitter saturation voltage
APPLICATIONS
・For
general–purpose switching
and power amplifier applications.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N4901
V
CBO
Collector-base voltage
2N4902
2N4903
2N4901
V
CEO
Collector-emitter voltage
2N4902
2N4903
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
5
10
1
87.5
150
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
2.0
UNIT
℃/W