Product Specification
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Silicon NPN Power Transistors
2N4921 2N4922 2N4923
DESCRIPTION
・With
TO-126 package
・Complement
to type 2N4918,2N4919 2N4920
・Excellent
safe operating area
・Low
collector-emitter saturation voltage
APPLICATIONS
・For
driver circuits ,switching ,and
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
2N4921
Collector-base voltage
2N4922
2N4923
2N4921
V
CEO
Collector-emitter voltage
2N4922
2N4923
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
1
3
1
30
150
-65~150
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.16
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
