Product Specification
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Silicon PNP Power Transistors
2N5597 2N5599 2N5601 2N5603
DESCRIPTION
・With
TO-66 package
・Excellent
safe operating area
・Low
collector-emitter saturation voltage
APPLICATIONS
・For
high frequency power amplifier ;
audio power amplifier and drivers.
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5597
V
CBO
Collector-base voltage
2N5599/5601
2N5603
2N5597
V
CEO
Collector-emitter voltage
2N5599/5601
2N5603
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
60
80
100
80
100
120
5
2
20
150
-65~150
V
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
℃/W
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