Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N5605 2N5607 2N5609 2N5611
DESCRIPTION
・With
TO-66 package
・Excellent
safe operating area
・Low
collector-emitter saturation voltage
APPLICATIONS
・For
general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5605
V
CBO
Collector-base voltage
2N5607/5609
2N5611
2N5605
V
CEO
Collector-emitter voltage
2N5607/5609
2N5611
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
60
80
100
80
100
120
5
5
25
150
-65~150
V
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
℃/W
JMnic