Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N5743 2N5744
DESCRIPTION
・With
TO-66 package
・Low
collector-emitter saturation voltage
・Fast
switching speed
APPLICATIONS
・For
general–purpose switching
and power amplifier applications.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbo
l
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
2N5743
Collector-base voltage
2N5744
2N5743
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Collector-emitter voltage
2N5744
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=100℃
Open collector
Open base
100
5
20
25
150
-65~200
V
A
W
℃
℃
Open emitter
100
60
V
CONDITIONS
VALUE
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
