Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
breakdown
APPLICATIONS
・Switching
regulator
・Inverters
・Solenoid
and relay drivers
・Motor
controls
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5804 2N5805
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
2N5804
Collector-base voltage
2N5805
2N5804
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Collector-emitter voltage
2N5805
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
300
6
5
110
150
-65~200
V
A
W
℃
℃
Open emitter
375
225
V
CONDITIONS
VALUE
300
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
