Product Specification
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Silicon NPN Power Transistors
2N5838 2N5839 2N5840
DESCRIPTION
・With
TO-3 package
・Low
collector-emitter saturation voltage
APPLICATIONS
・For
use in switching power supply applications
and other inductive switching circuits.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5838
V
CBO
Collector-base voltage
2N5839
2N5840
2N5838
V
CEO
Collector-emitter voltage
2N5839
2N5840
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
275
300
375
250
275
350
6
3
100
150
-65~200
V
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
