Product Specification
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Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N5885 2N5886
APPLICATIONS
・They
are intended for use in power linear
and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5883 2N5884
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
Collector-base
voltage
Collector-emitter
voltage
2N5883
Open emitter
2N5884
2N5883
Open base
2N5884
Open collector
80
5
25
50
7.5
T
C
=25℃
200
200
-65~200
V
A
A
A
W
℃
℃
80
60
V
CONDITIONS
VALUE
60
V
UNIT
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
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