Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N5883 2N5884
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-emitter
sustaining voltage
2N5883
I
C
=0.2A ;I
B
=0
2N5884
I
C
=15A; I
B
=1.5A
I
C
=25A ;I
B
=6.25A
I
C
=25A ;I
B
=6.25A
I
C
=10A ; V
CE
=4V
V
CB
=ratedV
CBO
; I
B
=0
2N5883
I
CEO
Collector cut-off current
2N5884
Collector cut-off current
(V
BE(off)
=1.5V)
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Trainsistion frequency
Collector base capacitance
V
CE
=40V; I
B
=0
V
CE
=ratedV
CEO
;
V
CE
=ratedV
CEO
; T
C
=150℃
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=4V
I
C
=10A ; V
CE
=4V
I
C
=25A ; V
CE
=4V
I
C
=1A ; V
CE
=10V;f=1MHz
I
E
=0; V
CB
=10V;f=1MHz
35
20
4
4
500
MHz
pF
100
1
mA
10
1
mA
V
CE
=30V; I
B
=0
2
mA
80
1
4
2.5
1.5
1
V
V
V
V
mA
CONDITIONS
MIN
60
V
TYP.
MAX
UNIT
V
CEO(sus)
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CBO
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
I
CEV
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
cbo
Switching times
t
r
t
s
t
f
Rise time
Storage time
Fall time
I
C
=10A ;I
B1
=- I
B2
=1A
V
CC
=30V
0.7
1
0.8
μs
μs
μs
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
