Product Specification
www.jmnic.com
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-66 package
・Low
collector-emitter saturation voltage
・Excellent
safe operating area
・Complement
to type 2N6372 2N6373 2N6374
APPLICATIONS
・Designed
for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5954 2N5955 2N5956
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5954
V
CBO
Collector-base voltage
2N5955
2N5956
2N5954
V
CEO
Collector-emitter voltage
2N5955
2N5956
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
90
70
50
80
60
40
5
6
2
40
150
-65~200
V
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.3
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
