Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2N5986 2N5987 2N5988
・Low
collector-emitter saturation voltage
APPLICATIONS
・Designed
for use in general purpose
power amplifier and switching circuits.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N5989 2N5990 2N5991
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N5989
V
CBO
Collector-base voltage
2N5990
2N5991
2N5989
V
CEO
Collector-emitter voltage
2N5990
2N5991
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
60
80
100
40
60
80
5
12
20
4
100
150
-65~150
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.25
UNIT
℃/W
JMnic