Product Specification
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Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N5629 2N5630
APPLICATIONS
・For
high voltage and high power
amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6029 2N6030
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
2N6029
Collector-base voltage
2N6030
2N6029
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
2N6030
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
120
7
16
20
5.0
200
150
-65~200
V
A
A
A
W
℃
℃
Open emitter
120
100
V
CONDITIONS
VALUE
100
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
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