Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
gain
・High
current
・High
dissipation
・Complement
to type 2N5883/2N5884
APPLICATIONS
・They
are intended for use in power linear
and low frequency switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6058/2N6059
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
Collector-base
voltage
Collector-emitter
voltage
2N6058
2N6059
2N6058
2N6059
Open collector
Open base
CONDITIONS
Open emitter
VALUE
80
100
80
100
5
12
20
0.2
T
C
=25℃
150
200
-65~200
V
A
A
mA
W
℃
℃
V
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
