Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・
・With
TO-66 package
・Low
collector-emitter saturation voltage
・High
breakdown voltage
APPLICATIONS
・For
horizontal deflection output stages
of TV’s and CRT’s
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6077 2N6078 2N6079
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6077
V
CBO
Collector-base voltage
2N6078
2N6079
2N6077
V
CEO
Collector-emitter voltage
2N6078
2N6079
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
275
250
350
300
275
375
6
7
45
150
-65~200
V
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.28
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
