Product Specification
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Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220 package
・High
power dissipation
・Complement
to PNP type :
2N6132 2N6133 2N6134
APPLICATIONS
・Power
amplifier and medium speed
switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N6129 2N6130 2N6131
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2N6129
V
CBO
Collector-base voltage
2N6130
2N6131
2N6129
V
CEO
Collector-emitter voltage
2N6130
2N6131
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
7
3
50
150
-65~150
V
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
2.5
UNIT
℃/W
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