Product Specification
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Silicon NPN Power Transistors
2N6216 2N6217
DESCRIPTION
・With
TO-3 package
・High
current ,high power dissipation
APPLICATIONS
・For
use in switching and linear
power applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
2N6216
Collector-base voltage
2N6217
2N6216
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Collector-emitter voltage
2N6217
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
C
=100℃
Open collector
Open base
140
7
10
71
150
-65~200
V
A
W
℃
℃
Open emitter
180
150
V
CONDITIONS
VALUE
200
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.46
UNIT
℃/W
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