Product Specification
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Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・Excellent
safe operating area
・High
gain at high current
APPLICATIONS
・General-purpose
types of switching
and linear-amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6246 2N6247 2N6248
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6246
V
CBO
Collector-base voltage
2N6247
2N6248
2N6246
V
CEO
Collector-emitter voltage
2N6247
2N6248
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
70
90
110
60
80
100
5
15
5
125
150
-65~200
V
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.4
UNIT
℃/W
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