Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220 package
・Low
collector saturation voltage
・Wide
safe operating area
APPLICATIONS
・For
medium power switching and
amplifier applications such as:series
and shunt regulators and driver and
output stages of high-fidelity amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N6291 2N6293
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
2N6291
Collector-base voltage
2N6293
2N6291
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
Collector-emitter voltage
2N6293
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
70
5
7
3
40
150
-65~150
V
A
A
W
℃
℃
Open emitter
80
50
V
CONDITIONS
VALUE
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
3.125
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
