Product Specification
www.jmnic.com
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-66 package
・DARLINGTON
・Low
collector saturation voltage
・Complement
to type 2N6300/6301
APPLICATIONS
・General
purpose power amplifier and
low frequency switching applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6298 2N6299
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
2N6298
Collector-base voltage
2N6299
2N6298
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Collector-emitter voltage
2N6299
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
80
5
8
16
0.12
75
200
-65~200
V
A
A
A
W
℃
℃
Open emitter
80
60
V
CONDITIONS
VALUE
60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
MAX
2.33
UNIT
℃/W
JMnic
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
