JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6338
2N6339
2N6338 2N6339 2N6340 2N6341
CONDITIONS
MIN
100
120
TYP.
MAX
UNIT
V
(SUS)CEO
Collector-emitter
sustaining voltage
I
C
=50mA ;I
B
=0
2N6340
2N6341
140
150
I
C
=10A; I
B
=1.0A
I
C
=25A; I
B
=2.5A
I
C
=10A; I
B
=1.0A
I
C
=25A; I
B
=2.5A
I
C
=10A ; V
CE
=2V
V
CE
=Rated V
CEO
; V
EB
=-1.5V
T
C
=150℃
V
CB
=Rated V
CB
; I
E
=0
2N6338
2N6339
V
CE
= 50V,I
B
=0
V
CE
= 60V,I
B
=0
50
2N6340
2N6341
V
CE
= 70V,I
B
=0
V
CE
= 75V,I
B
=0
V
EB
=6V; I
C
=0
I
C
=0.5A ; V
CE
=2V
I
C
=10A ; V
CE
=2V
I
C
=25A ; V
CE
=2V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=1A ; V
CE
=10V;f=10MHz
40
50
30
12
300
120
100
1.0
1.8
1.8
2.5
1.8
10
1.0
10
V
V
CEsat-1
V
CEsat-2
V
BE sat-1
V
BE sat-2
V
BE
I
CEX
I
CBO
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
V
V
V
V
V
μA
mA
μA
I
CEO
Collector
cut-off current
μA
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
μA
pF
MHz
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
