JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
DC current gain
・Fast
switching times
・Low
collector saturation voltage
・Complement
to type 2N6436~38
APPLICATIONS
・For
use in industrial-military power amplifier
and switching circuit applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6338 2N6339 2N6340 2N6341
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6338
2N6339
V
CBO
Collector-base voltage
2N6340
2N6341
2N6338
2N6339
V
CEO
Collector-emitter voltage
2N6340
2N6341
V
EBO
I
C
I
CM
I
BC
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
140
150
6
25
50
10
200
200
-65~200
V
A
A
A
W
℃
℃
Open emitter
160
180
100
120
V
CONDITIONS
VALUE
120
140
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W