JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2N6359
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdwon voltage
I
C
=0.2A ;I
B
=0
80
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=8A ;I
B
=0.8A
1.4
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=16A; I
B
=3.2A
4.0
V
V
BE
Base-emitter on voltage
I
C
=8A ; V
CE
=4V
2.2
V
I
CEO
Collector cut-off current
V
CE
=80V; I
B
=0
V
CE
=100V; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=7V; I
C
=0
2.0
2.0
10.0
5.0
mA
I
CEX
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE-1
DC current gain
I
C
=8A ; V
CE
=4V
15
60
h
FE-2
DC current gain
I
C
=16A ; V
CE
=4V
5
f
T
Transition freuqency
I
C
=1A ; V
CE
=4V
0.2
MHz
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
