JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-66 package
・Low
collector saturation voltage
・Excellent
safe operating area
APPLICATIONS
・Designed
for switching and wide-band
amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6372 2N6373 2N6374
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6372
V
CBO
Collector-base voltage
2N6373
2N6374
2N6372
V
CEO
Collector-emitter voltage
2N6373
2N6374
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
90
70
50
80
60
40
6
6
40
150
-65~200
V
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
4.37
UNIT
℃/W
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
