JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・Complement
to type 2N6666/6667/6668
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
APPLICATIONS
・Designed
for general-purpose amplifier
and low speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N6386 2N6387 2N6388
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
PARAMETER
2N6386
V
CBO
Collector-base voltage
2N6387
2N6388
2N6386
V
CEO
Collector-emitter voltage
2N6387
2N6388
V
EBO
I
C
Emitter-base voltage
2N6386
Collector current-DC
2N6387/6388
I
CM
I
B
P
C
T
j
T
stg
Collector current-Pulse
Base current-DC
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
10
15
0.25
65
150
-65~150
A
A
W
℃
℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
8
A
V
V
V
UNIT
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
